| Titolo | Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2002 |
| Autori | Brandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander |
| Rivista | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Paginazione | 1626-1639 |
| ISSN | 10711023 |
| Parole chiave | Cathodoluminescence, Composition effects, Electric field effects, Epitaxial growth, Gallium nitride, Indium nitride, Metal stable growth, Molecular beam epitaxy, Photoluminescence, Plasma applications, Plasma assisted molecular beam epitaxy, Secondary ion mass spectrometry, Semiconducting indium compounds, Semiconductor quantum wells, Synthesis (chemical), Transition energy, Transmission electron microscopy |
| Abstract | (In,GaN)/GaN MQWs were synthesized by plasma-assisted MBE. The structural properties of these MQWs were investigated with particular emphasis on an accurate determination of their actual structural parameters. In surface segregation affected the optical properties of the samples. |
| Note | cited By 10; Conference of Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference Date: 6 January 2002 Through 10 January 2002; Conference Code:59676 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035982597&doi=10.1116%2f1.1491540&partnerID=40&md5=1bdb353ad63136e8015e34578c4208f9 |
| DOI | 10.1116/1.1491540 |
| Citation Key | Brandt20021626 |
