Morphology and crystallinity of homoepitaxial (1 0 0)ZnTe: Interplay between ad-atom stoichiometry and defects nucleation during MOVPE, Lovergine, N., Traversa M., Prete P., Di Luccio Tiziana, Tapfer Leander, and Mancini A.M. , Journal of Crystal Growth, Volume 275, Number 1-2, p.e1189-e1195, (2005)

Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD, Tagliente, M.A., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Physics D: Applied Physics, Volume 36, Number 10 A, p.A192-A197, (2003)

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy, Brandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander , Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 20, Number 4, Santa Fe, NM, p.1626-1639, (2002)

Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates, Tagliente, M.A., De Caro L., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Applied Physics, Volume 92, Number 1, p.70-76, (2002)

Anisotropy and transport properties of (Bi2Sr2CuO6+δ)m/(CaCuO2) n multilayers obtained by molecular beam epitaxy, Salvato, M., Attanasio C., Carbone G., Montella A., Di Luccio Tiziana, Prischepa S.L., and Maritato L. , Physica C: Superconductivity and its Applications, Volume 341-348, Number PART 2, p.1903-1904, (2000)

Bi2Sr2CuO6+δ/ACuO2 (A = Ca,Sr) superconducting multilayers obtained by molecular beam epitaxy, Salvato, M., Attanasio C., Carbone G., Di Luccio Tiziana, Prischepa S.L., Russo R., and Maritato L. , Physica C: Superconductivity and its Applications, Volume 316, Number 3, p.215-223, (1999)

Properties of Bi2+xSr2-xCuO6+δ thin films obtained by MBE, Salvato, M., Salluzzo M., Di Luccio Tiziana, Attanasio C., Prischepa S.L., and Maritato L. , Thin Solid Films, Volume 353, Number 1, p.227-232, (1999)

Superconductivity in Bi2Sr2(Sr,Ca)CuOi multilayers obtained by molecular beam epitaxy, Salvato, M., Attanasio G., Carbone G., Di Luccio Tiziana, Prischepa S.L., Russo R., and Maritato L. , IEEE Transactions on Applied Superconductivity, Volume 9, Number 2 PART 2, p.2006-2009, (1999)

X-ray diffraction analysis fo GaAs/AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs surfaces, Tagliente, M.A., De Caro L., Tapfer Leander, Nötzel R., Fischer A., and Ploog K. , Solid State Electronics, Volume 37, Number 4-6, p.747-751, (1994)