GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient, Döscher, H., Hens P., Beyer A., Tapfer Leander, Volz K., and Stolz W. , Journal of Crystal Growth, Volume 464, p.2-7, (2017)

Fabrication of superconducting Nd2-xCexCuO 4±δ films by automated dc sputtering technique, Guarino, A., Patimo G., Vecchione A., Di Luccio Tiziana, and Nigro A. , Physica C: Superconductivity and its Applications, Volume 495, p.146-152, (2013)

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy, Brandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander , Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 20, Number 4, Santa Fe, NM, p.1626-1639, (2002)

X-ray characterization of LiNbO3 films grown by pulsed laser deposition on SrTiO3(1 0 0), NdGaO3(1 1 0) and MgO(1 1 1) substrates, Tagliente, M.A., De Caro L., Sacchetti A., Tapfer Leander, Balestrino G., Medaglia P.G., Tebano A., and Tucciarone A. , Journal of Crystal Growth, Volume 216, Number 1, p.335-342, (2000)

Properties of Bi2+xSr2-xCuO6+δ thin films obtained by MBE, Salvato, M., Salluzzo M., Di Luccio Tiziana, Attanasio C., Prischepa S.L., and Maritato L. , Thin Solid Films, Volume 353, Number 1, p.227-232, (1999)