Characterization of MoS2:Nb sputtered thin films. An application as hole transport layer in Cu2ZnSnS4/Si tandem solar cells, Malerba, C., Valentini M., Menchini F., Mirabile Gattia Daniele, Salza E., and Mittiga A. , Thin Solid Films, Volume 806, (2024)

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer, Potì, B., Tagliente M.A., and Passaseo A. , Journal of Non-Crystalline Solids, Volume 352, Number 23-25, p.2332-2334, (2006)

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy, Brandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander , Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 20, Number 4, Santa Fe, NM, p.1626-1639, (2002)

Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates, Tagliente, M.A., De Caro L., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Applied Physics, Volume 92, Number 1, p.70-76, (2002)