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HfO2 films with high laser damage threshold

TitoloHfO2 films with high laser damage threshold
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2000
AutoriAlvisi, Marco, Di Giulio M., Marrone S.G., Perrone M.R., Protopapa Maria Lucia, Valentini A., and Vasanelli L.
RivistaThin Solid Films
Volume358
Paginazione250-258
ISSN00406090
Parole chiaveDual-ion-beam sputtering, Electron beams, evaporation, Fused silica, Gas lasers, Hafnium compounds, Hafnium dioxide, Ion beams, Ion-assisted electron beam evaporation, Laser damage, Optical films, Photoacoustic beam deflection techniques, Photoacoustic effect, Sputter deposition, Substrates, Thin films
Abstract

Laser damage resistance studies have been performed at 308 nm (XeCl laser) by the photoacoustic beam deflection technique, on hafnium dioxide (HfO2) thin films deposited on fused silica substrates either by the ion-assisted electron beam evaporation technique or by a dual-ion-beam sputtering technique. Films of quite high laser damage threshold (7 J/cm2) have been deposited by the electron beam evaporation technique. The optical and structural film characteristics and their relation to damage threshold have also been investigated.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0033901956&doi=10.1016%2fS0040-6090%2899%2900690-2&partnerID=40&md5=4d23311c6903e250291d01d68952d325
DOI10.1016/S0040-6090(99)00690-2
Citation KeyAlvisi2000250