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Two-pass excimer laser annealing process to control amorphous silicon crystallization

TitleTwo-pass excimer laser annealing process to control amorphous silicon crystallization
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication1999
AuthorsMariucci, Luigi, Carluccio Roberto, Pecora Alessandro, Foglietti Vittorio, Fortunato Guglielmo, and Della Sala Dario
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
PaginationL907-L910
ISSN00214922
KeywordsAmorphous films, Amorphous silicon, Annealing, Chemical vapor deposition, Crystallization, Excimer laser annealing, Excimer lasers, Grain growth, Grain growth control, irradiation, Light modulation, Mask patterns, Masks, Polycrystalline materials, Scanning electron microscopy
Abstract

A new approach to control the lateral-growth mechanism of polycrystalline silicon films through appropriate spatial modulation of the absorbed laser energy and with a two-pass excimer laser annealing process is presented. In the first pass, spatial modulation of the light intensity has been achieved by irradiating the precursor amorphous silicon films through a patterned mask in contact with the sample, triggering the lateral growth of grain in excess of 1 μm. During the second pass of the process, the film is reirradiated without the mask and the laterally grown grains can be used as seeds and can be propagated to crystallize the film uniformly. With optimized mask patterns the sample area can be fully covered with laterally grown grains.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0033173939&partnerID=40&md5=aa77f5587154506e924b80547295b3ac
Citation KeyMariucci1999