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Experimental results on silicon annealing by a long-pulse, high-power XeCl laser system

TitoloExperimental results on silicon annealing by a long-pulse, high-power XeCl laser system
Tipo di pubblicazionePresentazione a Congresso
Anno di Pubblicazione2000
AutoriMurra, D., Bollanti S., Bonfigli F., Della Sala Dario, Di Lazzaro P., and Letardi T.
Conference NameProceedings of SPIE - The International Society for Optical Engineering
EditoreSociety of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
Conference LocationPotenza-Lecce, Italy
Parole chiaveAmorphous silicon, Annealing, Beam homogenizer, Density (optical), Excimer lasers, glass, Grain size and shape, High power lasers, Laser beams, Pulsed laser applications, Semiconducting silicon, Silicon annealing, Substrates
Abstract

The XeCl laser facility Hercules, delivering a maximum energy of 8 J in 160 ns FWHM, has been used to irradiate amorphous silicon (a-Si) films on glass substrate. We designed an optical homogeneizer to reshape the large cross-section of the laser beam (10×5) cm2, in order to reach a fluence up to 0.5 J/cm2 over a (13×1) cm2 area. The beam resulted spatially homogenous within 10% (referred to peak-to-peak fluctuations). We obtained poly-silicon films with grain size ranging from 0.1 to 2 μm, depending on the laser energy density. These preliminary results show that the grain size is critically fluence-dependent when the so-called super-lateral-growth regime is approached (approximately at 0.42 J/cm2 for a 50 nm-thick a-Si film), with a maximum slope of the grain size vs. energy density greater than 0.5 μm/(mJ/cm2).

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0033905445&partnerID=40&md5=6a7825c79fad77436ba63d01dddb2a43
Citation KeyMurra2000345