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Morphology and crystallinity of homoepitaxial (1 0 0)ZnTe: Interplay between ad-atom stoichiometry and defects nucleation during MOVPE

TitleMorphology and crystallinity of homoepitaxial (1 0 0)ZnTe: Interplay between ad-atom stoichiometry and defects nucleation during MOVPE
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2005
AuthorsLovergine, N., Traversa M., Prete P., Di Luccio Tiziana, Tapfer Leander, and Mancini A.M.
JournalJournal of Crystal Growth
Volume275
Paginatione1189-e1195
ISSN00220248
KeywordsCrystal structure, freezing, High-resolution X-ray diffraction, Homoepitaxy, Light emitting diodes, Metallorganic vapor phase epitaxy, Molecular beam epitaxy, Morphology, Planar defects, Stacking faults, Surface treatment, Surfaces, Vertical gradient freezing (VGF) methods, X ray diffraction analysis, X ray scattering, Zinc compounds, ZnTe
Abstract

The morphology and structure of metalorganic vapour phase epitaxy grown homoepitaxial (1 0 0)ZnTe layers on high-quality substrates grown by the vertical gradient freezing method is reported. Growth below 350 °C leads to surface ridging along a 〈1 1 0〉 in-plane direction of the epilayer, the morphology of samples grown at or above 350 °C depending instead on the Te:Zn ad-atom relative abundance. Nearly featureless morphology is observed for epilayers grown under Zn-rich or nearly stoichiometric surface conditions, whereas large pyramid-like hillocks develop on Te-rich surfaces, their density reaching up to 106-107 cm-2. Hillock formation is supposed to be driven by Te ad-atoms experiencing a Schwoebel potential barrier at the step edges around spiral centres, the latter ascribed to partial dislocation pairs bounding stacking faults (SFs). Analysis of the X-ray diffuse scattering intensity around the (4 0 0) reciprocal lattice point of the samples demonstrates that SFs occur in epilayers grown at or above 350 °C, their density increasing with the growth temperature. The SF average diameter on 1 1 1 planes is estimated as ∼200-300 nm. © 2004 Elsevier B.V. All rights reserved.

Notes

cited By 10; Conference of Proceedings of the 14th International Conference on Crystal Growth and the 12th Internatioanl Conference on Vapor Growth and Epitaxy ; Conference Code:64470

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-15844378391&doi=10.1016%2fj.jcrysgro.2004.11.139&partnerID=40&md5=b0900dfe80ee3b89c9a7b97dda575211
DOI10.1016/j.jcrysgro.2004.11.139
Citation KeyLovergine2005