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Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films

TitoloLow temperature growth of r.f. reactively planar magnetron-sputtered AlN films
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1995
AutoriPenza, Michele, De Riccardis Maria Federica, Mirenghi L., Tagliente M.A., and Verona E.
RivistaThin Solid Films
Parole chiaveAluminum compounds, Average grain size, Binding energy standard deviation, Chemical properties, Composition, Crystal growth, Crystal structure, Deposition rate, Gas flow ratio, Magnetron sputtering, Mean Auger parameter, Metallic films, Morphology, Physical properties, Polycrystalline aluminum nitride film, Scanning electron microscopy, Semiconducting silicon, Thermal effects, X ray diffraction, X ray photoelectron spectroscopy

Polycrystalline AlN films were deposited on Si(100) and Si(111) substrates by sputtering in an N2 + Ar gas mixture at a substrate temperature in the range 200-500 °C. The effect of the preparation conditions-substrate temperature, sputtering pressure, r.f. power and gas mixture-on the physical and chemical properties of the films were investigated by means of X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. The polycrystalline oriented AlN films were obtained at deposition rates in the range 0.20-0.56 μm h-1 with an N2 Ar gas flow ratio of 100%. The film average grain size was estimated to be 60-80 nm. The good agreement between the measured Auger parameter (α = 1463.0 ± 0.1 eV) and the tabulated value (α = 1462.9 eV) with a binding energy standard deviation of 0.05 eV indicated the formation of the AlN compound. © 1995.


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Citation KeyPenza1995154