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aSi:H produced by double ion-beam sputtering

TitoloaSi:H produced by double ion-beam sputtering
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1983
AutoriColluzza, C., Della Sala Dario, Fortunato G., Scaglione S., and Frova A.
RivistaJournal of Non-Crystalline Solids
Volume59-60
Paginazione723-726
ISSN00223093
Parole chiaveELECTRIC MEASUREMENTS, ION BEAMS - Applications, Optical variables measurement, Semiconducting silicon, Sputtering
Abstract

A novel technique to obtain a-Si:H films by a dual ion-beam sputtering (DIBS) system is described. A beam of argon is used to sputter silicon, while a beam of hydrogen impinges directly onto the growing film. The system has proven to be very efficient in the control of growth parameters. Hydrogen incorporation can be remarkably affected by varying the energy of the H ions. IR spectra indicate that, when the energy is raised from 80 to 800 eV, the density of isolated SiH clusters in the material increases relative to SiH. The samples obtained exhibit promising optical and electrical properties. The optical energy gap is typically 1.7 eV and the room temperature conductivity is in the range 10-9-10-11(ωcm)-1. Photoconductivity values of 10-9(ω cm)-1 are obtained. © 1983.

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cited By 6

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0020882435&doi=10.1016%2f0022-3093%2883%2990273-9&partnerID=40&md5=71b898916b2c07a4e1687a53683fd929
DOI10.1016/0022-3093(83)90273-9
Citation KeyColluzza1983723