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Critical analysis of the determination of the density of defects in a-Si1-xGex alloys with the PDS technique

TitoloCritical analysis of the determination of the density of defects in a-Si1-xGex alloys with the PDS technique
Tipo di pubblicazionePresentazione a Congresso
Anno di Pubblicazione1988
AutoriDella Sala, Dario, Reita C., Conte G., Galluzzi F., and Grillo G.
Conference NameConference Record of the IEEE Photovoltaic Specialists Conference
EditorePubl by IEEE, Piscataway, NJ, United States
Conference LocationLas Vegas, NV, USA
Parole chiaveDangling Bonds, Density of States, Electronic properties, Photothermal Deflection Spectroscopy, Silicon Germanium Alloys, Spectroscopic analysis
Abstract

The application of PDS (photothermal deflection spectroscopy) to the counting of defect states is complicated in a-GexSi1-x by the coexistence of two types of dangling bonds and their unknown energetic position in the forbidden energy gap. Using a model density of states, the authors conclude that it is intrinsically impossible to distinguish between Si and Ge dangling bonds. In addition, despite the fact that the density of bulk defects can be evaluated successfully, it is suggested that there is always a spurious absorption due to surface states. The measured density of dangling bonds keeps increasing from pure a-Si:H (Nd ≅ 2 × 1016 cm-3) to pure a-Ge:H (Nd ≅ 5 × 1017 cm-3), and this is shown to be a material property.
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0024179925&partnerID=40&md5=c01040be7aab6521476062966e8bb6e3
Citation KeyDellaSala1988212