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Optoelectronic properties of amorphous hydrogenated silicon-germanium alloys

TitoloOptoelectronic properties of amorphous hydrogenated silicon-germanium alloys
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1990
AutoriConte, G., Della Sala Dario, Galluzzi F., Grillo G., Ostrifate C., and Reita C.
RivistaSemiconductor Science and Technology
Volume5
Paginazione890-893
ISSN02681242
Parole chiaveFilms–Amorphous, Glow Discharges, Optical Energy Gaps, Optoelectronic devices, Silicon Germanium Alloys
Abstract

A study on amorphous hydrogenated silicon-germanium alloys is presented. Amorphous thin films are grown by glow discharge decomposition of silane/germane gas mixtures, in the presence of a large hydrogen concentration. Optical, electrical and photoelectrical properties of intrinsic alloys are reported and their effect on the performance of p-i-n photovoltaic devices is discussed.
Note

cited By 9
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0025472583&doi=10.1088%2f0268-1242%2f5%2f8%2f015&partnerID=40&md5=108c9c39b4945ec2440ea921c5ef25e1
DOI10.1088/0268-1242/5/8/015
Citation KeyConte1990890