| Titolo | Metal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2004 |
| Autori | Loreti, S., Santoni A., Fryček R., Menicucci I., Minarini Carla, and Della Sala Dario |
| Rivista | Materials Science Forum |
| Volume | 453-454 |
| Paginazione | 43-46 |
| ISSN | 02555476 |
| Parole chiave | Annealing, Carrier mobility, Chemical vapor deposition, Laser-melted silicon, Low-Pressure Chemical Vapor Deposition (LPCVD), Metal-induced Crystallization (MIC), Microelectromechanical devices, Polysilicon, Scanning electron microscopy, Silicon films, X ray diffraction |
| Abstract | Polycrystalline silicon films were grown from Si2H6, by Low-Pressure Chemical Vapor Deposition (LPCVD) at 800K and in-situ laser annealing of amorphous silicon seed layers deposited on different metallic films. According to the Metal Induced Crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. The influence of different metals on the obtained morphologies and crystalline phases were investigated by X-ray diffraction and Scanning Electron Microscopy. The experimental results show that the film morphology depends strongly on the metal used to promote the silicon crystallization. |
| Note | cited By 2; Conference of Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V ; Conference Date: 15 September 2003 Through 19 September 2003; Conference Code:63331 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-3142780054&partnerID=40&md5=45a26c40363a108cff641d919704314d |
| Citation Key | Loreti200443 |
