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Deposition of SiO2 films with high laser damage thresholds by ion-assisted electron-beam evaporation

TitoloDeposition of SiO2 films with high laser damage thresholds by ion-assisted electron-beam evaporation
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1999
AutoriAlvisi, Marco, De Nunzio G., Di Giulio M., Ferrara Maria Cristina, Perrone M.R., Protopapa Maria Lucia, and Vasanelli L.
RivistaApplied Optics
Volume38
Paginazione1237-1243
ISSN00036935
Abstract

SiO2 thin films (≈100 nm thick) with transmittivity and a laser damage threshold nearly equal to those of bulk material are deposited on silica substrates by the technique of ion-assisted electron-beam evaporation. The influence of film packing density on the laser damage threshold is investigated by the technique of photoacoustic probe beam deflection. It is shown that films with lower packing density may have a higher laser damage threshold and as a consequence better heat dissipation. © 1999 Optical Society of America.
Note

cited By 18
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0002941993&partnerID=40&md5=75305fb544806475dadcd649c39f31b1
Citation KeyAlvisi19991237