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Cathodoluminescence from nanocrystals in mechanically milled silicon

TitoloCathodoluminescence from nanocrystals in mechanically milled silicon
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2001
AutoriDíaz-Guerra, C., Montone Amelia, Piqueras J., and Cardellini F.
RivistaSolid State Phenomena
Volume78-79
Paginazione103-110
ISSN10120394
Parole chiaveBall milling, Cathodoluminescence, Crystal defects, Crystal structure, Luminescence, Mechanical milling, Nanocrystalline silicon, Nanostructured materials, Optoelectronic devices, Quantum confinement effect, quantum theory, Raman spectroscopy, Scanning electron microscopy, silicon, Transmission electron microscopy, X ray diffraction analysis
Abstract

Mechanical milling is a technique extensively used to prepare nanocrystalline metallic materials but it has been less frequently applied to semiconductors. The preparation of nanocrystalline silicon by different methods is a subject of increasing interest due to the luminescent properties of this material and its possible application in optoelectronic devices. In this work high-energy ball milling has been used to prepare nanocrystals from single crystalline silicon wafers. The structure of the milled samples has been assessed by X-ray diffraction, transmission electron microscopy (TEM) and Raman spectroscopy, while their luminescence has been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The samples consist of a powder of particles with sizes of hundreds of nanometers aggregated to form bigger particles of several microns. TEM reveals that the particles consist of nanocrystals with a wide range of sizes including crystallites with dimension of few nanometers. CL spectra of the milled samples show a band at 1.61 eV, attributed to the presence of nanocrystals through a quantum confinement effect. It is suggested that a milling induced infrared emission is related to a high density of extended defects present in the milled samples.

Note

cited By 6; Conference of 6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) ; Conference Date: 12 November 2000 Through 16 November 2000; Conference Code:58206

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0035018416&partnerID=40&md5=538253a0005d1f70aebca8ea8792efe4
Citation KeyDíaz-Guerra2001103