Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD, Tagliente, M.A., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Physics D: Applied Physics, Volume 36, Number 10 A, p.A192-A197, (2003)

Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates, Tagliente, M.A., De Caro L., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Applied Physics, Volume 92, Number 1, p.70-76, (2002)