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Dual-ion-beam sputtering technique for the production of hydrogenated amorphous silicon

TitoloDual-ion-beam sputtering technique for the production of hydrogenated amorphous silicon
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1984
AutoriScaglione, S., Coluzza C., Della Sala Dario, Mariucci L., Frova A., and Fortunato G.
RivistaThin Solid Films
Volume120
Paginazione215-222
ISSN00406090
Parole chiaveINFRARED RADIATION - Absorption, Ion beams, Semiconducting silicon, SEMICONDUCTOR MATERIALS - Amorphous, Sputtering
Abstract

We describe here the dual-ion-beam sputtering method for the production of hydrogenated amorphous silicon. The spatial distribution of the ion beams was tested and correlated to the transport properties of the films. Visible and IR absorption measurements were also used to characterize the material. © 1984.
Note

cited By 5
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0021504994&doi=10.1016%2f0040-6090%2884%2990297-9&partnerID=40&md5=00d4056e10351f30c34bd6c6464e4bfa
DOI10.1016/0040-6090(84)90297-9
Citation KeyScaglione1984215